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80NT3 2PFR2 BD121 MBB50A6 22F09 MAX458 21UHR MOB81DR
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  a d v a n c e d s e m i c o n d u c t o r, i n c. rev. b 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c none symbol test conditions minimum typical maximum units v b i r = 10 a 15 v c j v r = 10 v f = 1.0 mhz 0.38 pf r s i f = 20 ma f = 100 mhz 0.8 ohms i f = 10 ma i r = 6.0 ma 10 ns t t c l = 100 pc 60 ps step recovery diode chip 5082-0008 description: the asi 5082-0008 is a silicon oxide passivated srd chip designed for hybrid local oscillator applications. features: ? gold contact metalization ? passivated chip maximum ratings i 100 ma v 15 v p diss 100 mw @ t c = 25 c t j -60 c to +200 c t stg -65 c to +200 c t sold t 1.0 minute +310 c package style chip chip = 0.020 x 0.020 x 0.011 inches top bond contact gold = 0.0025 inches bottom contact gold (full area)


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